Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading-Reference-Cited by-同舟云学术

Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading

Published:2022-12-23 Issue:3 Volume:9 Page:2200998
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Kim Seung Soo¹,Yong Soo Kyeom¹,Kim Jihun¹,Choi Jin Myung¹,Park Tae Won¹,Kim Hyun Young¹,Kim Hae Jin¹²,Hwang Cheol Seong¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Gwanak‐ro 1 Gwanak‐gu Seoul 08826 Republic of Korea

2. Department of Electronic Materials Engineering The University of Suwon Hwaseong‐si Gyeonggi‐do 18323 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200998

Reference38 articles.

1. 30.1 A 176-Stacked 512Gb 3b/Cell 3D-NAND Flash with 10.8Gb/mm2 Density with a Peripheral Circuit Under Cell Array Architecture

2. S. S.Talreja J.Choi Flash Memory Summit 2022 Keynote 5: Solidigm/SK Hynix “Unlocking the Potential of Data ‐ the New Paradigm of Storage” https://www.flashmemorysummit.com/English/Conference/Keynotes_2022.htmlandhttps://www.youtube.com/watch?v=zigUHRHB9Vw.

3. 232‐Layer NAND https://www.micron.com/products/nand-flash/232-layer-nand(accessed: July2022).

4. Review of Semiconductor Flash Memory Devices for Material and Process Issues

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