Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO <sub>2</sub> /ZrO <sub>2</sub> Superlattice Structure-Reference-Cited by-同舟云学术

Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO ₂ /ZrO ₂ Superlattice Structure

Published:2022-10-25 Issue:1 Volume:9 Page:2200737
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv Elect Materials

Author:

Bai Na¹,Xue Kan‐Hao¹²^ORCID,Huang Jinhai¹,Yuan Jun‐Hui¹,Wang Wenlin¹,Mao Ge‐Qi¹,Zou Lanqing¹,Yang Shengxin¹,Lu Hong¹,Sun Huajun¹²^ORCID,Miao Xiangshui¹²

Affiliation:

1. School of Integrated Circuits School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China

2. Hubei Yangtze Memory Laboratories Wuhan 430205 China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202200737

Reference52 articles.

1. Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period

2. ZrO2 Ferroelectric FET for Non-volatile Memory Application

3. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

4. Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

5. Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices

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