Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period-Reference-Cited by-同舟云学术

Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period

Published:2021-12-13 Issue: Volume: Page:2100662
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Jiang Pengfei¹²,Wei Wei¹²,Yang Yang¹²,Wang Yuan¹²,Xu Yannan¹²,Tai Lu¹²,Yuan Peng¹²,Chen Yuting¹²,Gao Zhaomeng¹²,Gong Tiancheng¹²,Ding Yaxin¹²,Lv Shuxian¹²,Dang Zhiwei¹²,Wang Yan¹²,Yang Jianguo¹²,Luo Qing¹²³,Liu Ming¹²^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences No. 3 Beitucheng West Road, Chaoyang District Beijing 100029 China

2. University of Chinese Academy of Sciences Beijing 100049 China

3. Department of Mathematics and Theories Peng Cheng Laboratory No. 2, Xingke 1st Street, Nanshan Shenzhen 518000 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202100662

Reference39 articles.

1. Non-volatile memory based on the ferroelectric photovoltaic effect