Oxygen Vacancy Modulation With TiO₂ Stack Interface Engineering for Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O₂ Thin Films-Reference-Cited by-同舟云学术

Oxygen Vacancy Modulation With TiO₂ Stack Interface Engineering for Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films

Published:2024-01 Issue:1 Volume:45 Page:100-103
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Xuepei¹^ORCID,Wu Maokun¹,Cui Boyao¹,Li Yuchun²,Wu Yishan¹,Wen Yichen¹,Liu Jinhao¹^ORCID,Li Xiaoxi²,Ye Sheng¹,Ren Pengpeng¹^ORCID,Ji Zhigang¹^ORCID,Lu Hongliang²^ORCID,Zhang David Wei²,Wang Runsheng³^ORCID,Huang Ru³

Affiliation:

1. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China

2. State Key Laboratory of ASIC and System, School of Microelectronics, Shanghai Institute of Intelligent Electronics and Systems, Fudan University, Shanghai, China

3. Institute of Microelectronics, Peking University, Beijing, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10376160/10311387.pdf?arnumber=10311387

Reference20 articles.

1. Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period