Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry-Reference-Cited by-同舟云学术

Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry

Published:2023-01-31 Issue:6 Volume:35 Page:2219-2237
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Yang Kun¹,Kim Se Hyun¹^ORCID,Jeong Hyun Woo¹,Lee Dong Hyun¹,Park Geun Hyeong¹,Lee Younghwan²,Park Min Hyuk¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul08826, Republic of Korea

2. Research Institute of Advanced Materials, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul08826, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.2c03379

Reference108 articles.

1. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

2. The fundamentals and applications of ferroelectric HfO2

3. Ferroelectricity in hafnium oxide thin films

4. Ferroelectricity in Simple Binary ZrO2 and HfO2

5. Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

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