Depolarization mitigated in ferroelectric Hf 0.5Zr 0.5O 2 ultrathin films (< 5 nm) on Si substrate by interface engineering-Reference-Cited by-同舟云学术

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Depolarization mitigated in ferroelectric Hf _0.5Zr _0.5O ₂ ultrathin films (< 5 nm) on Si substrate by interface engineering

Published:2024-03 Issue:3 Volume:13 Page:282-292
ISSN:2226-4108
Container-title:Journal of Advanced Ceramics
language:en
Short-container-title:

Author:

Kim Se Hyun,Lee Younghwan,Lee Dong Hyun,Park Geun Hyeong,Jeong Hyun Woo,Yang Kun,Cho Yong Hyeon,Kim Young Yong,Park Min Hyuk

Publisher

Tsinghua University Press

Reference64 articles.

1. Emerging fluorite-structured antiferroelectrics and their semiconductor applications;GH Park;ACS Appl Electron Mater,2023

2. A perspective on the physical scaling down of hafnia-based ferroelectrics;MH Park;Nanotechnology,2023

3. Perspective on ferroelectric devices: Lessons from interfacial chemistry;K Yang;Chem Mater,2023

4. Ferroelectric thin films for oxide electronics;M Müller;ACS Appl Electron Mater,2023

5. Lessons from hafnium dioxide-based ferroelectrics;B Noheda;Nat Mater,2023

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