Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices-Reference-Cited by-同舟云学术

Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices

Author:

Sulzbach Milena Cervo¹^ORCID,Estandía Saúl¹,Gàzquez Jaume¹,Sánchez Florencio¹,Fina Ignasi¹,Fontcuberta Josep¹

Affiliation:

1. Institut de Ciència de Materials de Barcelona (ICMAB‐CSIC) Campus UAB Bellaterra Catalonia 08193 Spain

Funder

Generalitat de Catalunya

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

Reference50 articles.

1. MLapedus DRAM Scaling Challenges Grow https://semiengineering.com/dram‐scaling‐challenges‐grow/(accessed: March2020).

2. R.Harris Is ReRAM the end of NAND flash? https://www.zdnet.com/article/is‐reram‐the‐end‐of‐nand‐flash/(accessed: March2020).

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