7‐4: Late‐News‐Paper: Development of High‐mobility Top‐gate IGZTO‐TFT and Suppression of Threshold Voltage Shift in Short Channel Utilizing Laser Irradiation Process-Reference-Cited by-同舟云学术

7‐4: Late‐News‐Paper: Development of High‐mobility Top‐gate IGZTO‐TFT and Suppression of Threshold Voltage Shift in Short Channel Utilizing Laser Irradiation Process

Published:2020-08 Issue:1 Volume:51 Page:79-82
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Nakata Mitsuru¹,Ochi Mototaka²,Takei Tatsuya¹,Tsuji Hiroshi¹,Miyakawa Masashi¹,Nishiyama Kohei²,Nakajima Yoshiki¹,Shimizu Takahisa¹

Affiliation:

1. NHK Science & Technology Research Laboratories Tokyo Japan

2. Kobe Steel Ltd. Applied Physics Research Laboratory Hyogo Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13809

Reference13 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. P‐4: High‐Mobility Back‐Channel‐Etched IGZTO‐TFT and Application to Dual‐Gate Structure

3. High Stress Stability imparted by Sn Addition Effect In High Mobility Amorphous IGZTO TFTs;Ochi M;Proceedings of IDW '18,2018

4. Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors;Park J;Appl Phys Lett.,2008

5. Source/Drain Formation of Self-Aligned Top-Gate Amorphous GaInZnO Thin-Film Transistors by $\hbox{NH}_{3}$ Plasma Treatment

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