Low-Resistive Source/Drain Formation Using Nitrogen Plasma Treatment in Self-Aligned In-Ga-Zn-Sn-O Thin-Film Transistors
Author:
Affiliation:
1. Science and Technology Research Laboratories, Japan Broadcasting Corporation, Tokyo, Japan
2. Applied Physics Research Laboratory, Kobe Steel, Ltd, Hyogo, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/9714452/09714498.pdf?arnumber=9714498
Reference26 articles.
1. Carrier Generation Mechanism and Origin of Subgap States in Ar- and He-Plasma-Treated In–Ga–Zn–O Thin Films
2. Self-Aligned Top-Gate Oxide Thin-Film Transistor Formed by Aluminum Reaction Method
3. Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs With Al Reacted Source/Drain
4. Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability
5. Self-Aligned Indium–Gallium–Zinc Oxide Thin-Film Transistor With Phosphorus-Doped Source/Drain Regions
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