Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors-Reference-Cited by-同舟云学术

Hydrogen-Doping-Enabled Boosting of the Carrier Mobility and Stability in Amorphous IGZTO Transistors

Published:2022-12-13 Issue:51 Volume:14 Page:57016-57027
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Jeonga¹,Choi Cheol Hee¹,Kim Taikyu¹^ORCID,Hur Jaeseok¹^ORCID,Kim Min Jae¹,Kim Eun Hyun²,Lim Jun Hyung²,Kang Youngho³^ORCID,Jeong Jae Kyeong¹^ORCID

Affiliation:

1. Department of Electronic Engineering, Hanyang University, Seoul04763, Korea

2. Samsung Display Co., Ltd., Yongin446-711, Republic of Korea

3. Department of Materials Science and Engineering, Incheon National University, Incheon22012, Korea

Funder

Samsung

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.2c18094

Reference67 articles.

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5. Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips

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