Neural approach for temperature-dependent modeling of GaN HEMTs-Reference-Cited by-同舟云学术

Neural approach for temperature-dependent modeling of GaN HEMTs

Published:2014-06-25 Issue:4 Volume:28 Page:359-370
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Marinković Zlatica¹,Crupi Giovanni²,Caddemi Alina²,Avolio Gustavo³,Raffo Antonio⁴,Marković Vera¹,Vannini Giorgio⁴,Schreurs Dominique M. M.-P.³

Affiliation:

1. Faculty of Electronic Engineering; University of Niš; 18000 Niš Serbia

2. DICIEAMA; University of Messina; Messina 98166 Italy

3. Electronic Engineering Department; University of Leuven; Leuven B-3001 Belgium

4. Department of Engineering; University of Ferrara; Ferrara 44122 Italy

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

FWO-Vlaanderen

Hercules Foundation

KU Leuven

Serbian Ministry for Education and Science

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

Reference32 articles.

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