Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs-Reference-Cited by-同舟云学术

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Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs

Published:2006-10 Issue:10 Volume:54 Page:3616-3622
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Crupi G.,Xiao D.,Schreurs D.M.M.-P.,Limiti E.,Caddemi A.,De Raedt W.,Germain M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/35997/01705679.pdf?arnumber=1705679

Cited by 127 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A new extraction method of GaN switch-HEMT small-signal model with capacitance scanning algorithm;IEICE Electronics Express;2024-09-10

2. Investigation and Modeling of Scalability in ISV and OSV GaN HEMTs;IEEE Microwave and Wireless Technology Letters;2024-09

3. Evaluating Nine Machine Learning Algorithms for GaN HEMT Small Signal Behavioral Modeling through K-fold Cross-Validation;Engineering, Technology & Applied Science Research;2024-08-02

4. An improved small‐signal model for GaN HEMTs devices;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-04-18

5. Estimation of electrostatic, analogue, Linearity/RF figures-of-merit for GaN/SiC HEMT;Micro and Nanostructures;2024-02

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