An improved small‐signal model for GaN HEMTs devices

Abstract

AbstractAn improved small‐signal model applied to GaN‐based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut‐off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance Lds is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured S‐parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.