Evaluation of GaN technology in power amplifier design-Reference-Cited by-同舟云学术

Evaluation of GaN technology in power amplifier design

Published:2008-11-13 Issue:1 Volume:51 Page:42-44
ISSN:0895-2477
Container-title:Microwave and Optical Technology Letters
language:en
Short-container-title:Microw. Opt. Technol. Lett.

Author:

Colantonio Paolo,Giannini Franco,Giofrè Rocco,Piazzon Luca

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/mop.23958/fullpdf

Reference9 articles.

1. Microwave AlGaN/GaN HFETs;Trew;IEEE Microwave Mag,2005

2. Nonlinear approaches to the design of microwave power amplifiers;Colantonio;Int J RF Microwave Computer Aided Eng,2004

3. M. Peroni P. Romanini A. Pantellini L. Mariucci A. Minotti G. Ghione V. Camarchia E. Limiti A. Serino A. Chini Design, fabrication and characterization of G Gate GaN HEMT for high-frequency/wide-band applications 2007

4. Output performance of idealised microwave power amplifiers;Kushner;Microwave J,1989

5. High efficiency ultra wide band power amplifier in GaN technology;Colantonio;Electron Lett,2008

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliable noise modeling of GaN HEMTs for designing low‐noise amplifiers;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2019-03-27

2. 30-512 MHz power amplifier design using GaN transistor;Microwave and Optical Technology Letters;2018-04-08

3. Broadband Nonreciprocal Phase Shifter Design Technique;IEEE Transactions on Microwave Theory and Techniques;2018-04

4. A Design Approach to Maximize the Efficiency vs. Linearity Trade-Off in Fixed and Modulated Load GaN Power Amplifiers;IEEE Access;2018

5. A high-power solid state amplifier for Galileo satellite system exploiting European GaN technology;International Journal of Microwave and Wireless Technologies;2016-03-08