High Temperature Annealing of AlGaN: Stress and Composition Changes-Reference-Cited by-同舟云学术

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High Temperature Annealing of AlGaN: Stress and Composition Changes

Published:2002-12-19 Issue:1 Volume: Page:568-571
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Sarua A.¹,Rajasingam S.¹,Kuball M.¹,Younes C.²,Yavich B.³,Wang W.N.³

Affiliation:

1. H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom

2. Interface Analysis Center, Ordure House, 121 St Michael's Hill, Bristol BS2 8BS, United Kingdom

3. Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390115

Reference8 articles.

1. Preparation of AlxGa1-xN/GaN heterostructure by MOVPE

2. Strain relaxation in AlGaN under tensile plane stress

3. Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures

4. Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

5. Control and elimination of cracking of AlGaN using low-temperature AlGaN interlayers

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1. Physical mechanisms limiting the performance and the reliability of GaN-based LEDs;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018

2. Chip-Level Degradation of InGaN-Based Optoelectronic Devices;Solid State Lighting Reliability Part 2;2017-07-13

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