Surfactants and antisurfactants on group‐III‐nitride surfaces
Author:
Affiliation:
1. Fritz‐Haber‐Institut der Max‐Planck‐Gesellschaft, Faradayweg 4‐6, D‐14195 Berlin (Dahlem), Germany
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303132
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1. Improved quality GaN grown by molecular beam epitaxy using In as a surfactant
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4. Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces
5. Formation Mechanism of Nanotubes in GaN
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