Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations-Reference-Cited by-同舟云学术

Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations

Published:1999-11-29 Issue:22 Volume:75 Page:3518-3520
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Adelmann C.,Langer R.,Feuillet G.,Daudin B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.125374

Reference10 articles.

1. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

2. Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence

3. Incorporation of indium during molecular beam epitaxy of InGaN

4. Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes

5. High quality GaN grown at high growth rates by gas-source molecular beam epitaxy

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