Fabrication of a‐SiGe structure by rf sputtering for solar cell purposes
Author:
Affiliation:
1. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, PO Box 49, 1525 Budapest, Hungary
2. Institute of Electrical Engineering, Dúbravská cesta 9, Slovak Academy of Sciences, 84239 Bratislava, Slovakia
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306325
Reference4 articles.
1. Fabrication of a-SiN/a-Si:H/n+a-Si:H multilayer structure by magnetron sputtering
2. Hydrogenated Amorphous Silicon Germanium Alloys Prepared by Triode rf Glow Discharge
3. E.Kótai in: Proc. 14th Int. Conf. Applied Accelerators in Res. Ind. ed. J. L. Duggan and I. L. Morgan Denton TX 6–9 Nov. 1996 (AIP Press New York 1997) p. 631.
4. On the Hopping and Band Conductivity in Molecular-Beam Epitaxial Low-Temperature Grown GaAs
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