Fabrication of a-SiN/a-Si:H/n+a-Si:H multilayer structure by magnetron sputtering
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. The Physics of Hydrogenated Amorphous Silicon;Joannopoulos,1984
2. Preparation of low defect grade a-Si:H films by RF magnetron sputtering technique
3. Photoemission spectroscopy of heterojunctions of hydrogenated amorphous silicon with silicon oxide and nitride
4. Hydrogenated amorphous silicon films deposited by reactive sputtering: The electronic properties, hydrogen bonding and microstructure
5. Energetic particle fluxes in magnetron sputter deposition of a-Si:H
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1. Plasma diagnostics of an Ar/NH3 direct-current reactive magnetron sputtering discharge for SiNx deposition;Thin Solid Films;2012-08
2. Studies on the RF sputtered amorphous SiGe thin films;Inorganic Materials;2006-01
3. Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films;Microelectronics Reliability;2005-07
4. Fabrication of a‐SiGe structure by rf sputtering for solar cell purposes;physica status solidi (c);2003-02
5. Wide Bandgap ≥1.8eV Amorphous Silicon for Solar Multijunction Cell and Image Sensor Applications;MRS Proceedings;2000
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