Wide Bandgap ≥1.8eV Amorphous Silicon for Solar Multijunction Cell and Image Sensor Applications

Abstract

ABSTRACTThis paper discusses the use of wide bandgap a-Si:H prepared by reactive magnetron sputtering (RMS) in low temperature and hydrogen control process deposition for multijunction cell applications. Primarily technological experiments are presented. The studies were carried out on a-Si:H films and TCO / n+ a-Si:H / i a-Si:H / Nickel Schottky barrier structures with i layer thicknesses ranging between 0.1 and 0.5 μm, using AFM, X-ray small angle and Raman spectroscopy, and optical transmission and reflection measurements after a degraded steady state. The properties exhibited by the films obtained in various ways are compared. In particular, fill factor dependence on light, field, and thickness is presented for RMS films.