High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference18 articles.
1. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
2. High-responsivity submicron metal-semiconductor-metal ultraviolet detectors
3. Visible blind GaN p-i-n photodiodes
4. Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
5. Ultraviolet photon counting with GaN avalanche photodiodes
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1. Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111);IEEE Transactions on Electron Devices;2023-07
2. Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors;Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title];2021-07-15
3. A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer;IEEE Transactions on Electron Devices;2021-06
4. Effects of vacancy defects on the electronic structure and optical properties of GaN:Fe;Superlattices and Microstructures;2019-09
5. High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors;Journal of Materials Chemistry C;2018
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