High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors-Reference-Cited by-同舟云学术

High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors

Published:2018 Issue:25 Volume:6 Page:6641-6646
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Wenliang¹²³⁴⁵^ORCID,Yang Zhichao¹²³⁴,Lu Zhenya⁶⁷²³⁴,Li Guoqiang¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510640

4. China

5. Guangdong Choicore Optoelectronics Co., Ltd.

6. Department of Electronic Materials

7. School of Materials Science and Engineering

Abstract

Nonpolar a-plane GaN-based metal-semiconductor–metal UV PDs, with high responsivity and low dark current, were made from a-plane GaN epitaxial films grown on r-plane sapphire by controlling the dislocation density.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC02281J

Reference36 articles.

1. Optical anisotropy modulation in nonpolar a-plane AlGaN by manipulating the anisotropic in-plane strains through SiNx interlayers engineering

2. Nonpolar ${m}$ -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth

3. Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes

4. A new system for achieving high-quality nonpolar m-plane GaN-based light-emitting diode wafers

5. Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarization-sensitive self-powered MoS2/a-GaN heterojunction photodetectors for ultraviolet polarized imaging;Applied Physics Letters;2024-06-17

2. High responsive UV photodetector on epitaxial non-polar GaN nanostructures grown on sapphire (10-10) using laser-MBE;Sensors and Actuators A: Physical;2024-04

3. Enhanced photoresponsivity in Bi2Se3 decorated GaN nanowall network-based photodetectors;Materials Research Bulletin;2024-03

4. High-Temperature Annealing Assisted High-Quality Semipolar (112̅2) AlN Film for Vacuum Ultraviolet Detectors;Crystal Growth & Design;2023-11-17

5. High performance ultraviolet photodetector based on CsPbCl3/ ZTO heterostructure film enabled by effective separation of photocarriers;Journal of Alloys and Compounds;2023-11