Ultraviolet photon counting with GaN avalanche photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126827
Reference16 articles.
1. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
2. High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
3. Visible-blind ultraviolet photodetectors based on GaN p-n junctions
4. Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise
5. Solar-blind AlGaN photodiodes with very low cutoff wavelength
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1. Low-Temperature Geiger-Mode Characterization of a Gallium Nitride p-i-N Avalanche Photodiode;IEEE Journal of Quantum Electronics;2023-06
2. Numerical Simulation on the Effect of Operation Temperature on the Optical Transfer Characteristics for GaN/AlGaN SAM Avalanche Photodiodes;2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD);2022-09-12
3. Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays;IEEE Photonics Technology Letters;2016-10-01
4. Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode;Chinese Optics Letters;2016
5. Solar- and Visible-Blind AlGaN Photodetectors;III-Nitride Ultraviolet Emitters;2015-11-13
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