Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122092
Reference7 articles.
1. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
2. Low noisep-π-nGaN ultraviolet photodetectors
3. Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
4. Visible-blind ultraviolet photodetectors based on GaN p-n junctions
5. Schottky barrier detectors on GaN for visible–blind ultraviolet detection
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