2.3 nm barrier AlN/GaN HEMTs with insulated gates
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference8 articles.
1. AlGaN/GaN high electron mobility transistors with InGaN back-barriers
2. Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
3. Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
4. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
5. DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistor
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1. Gate leakage mechanisms of AlN/GaN High electron mobility transistors;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
2. Low-Resistance Ta/Al/Ni/Au Ohmic Contact and Formation Mechanism on AlN/GaN HEMT;IEEE Transactions on Electron Devices;2022-11
3. Investigation of Ta2O5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si;IEEE Transactions on Electron Devices;2019-03
4. AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with thermal atomic layer deposition AlN gate dielectric;Japanese Journal of Applied Physics;2018-07-30
5. MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio;Journal of Crystal Growth;2015-03
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