MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio-Reference-Cited by-同舟云学术

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MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio

Published:2015-03 Issue: Volume:414 Page:237-242
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ma Jun,Lu Xing,Zhu Xueliang,Huang Tongde,Jiang Huaxing,Xu Peiqiang,Lau Kei May

Funder

Research Grants Council (RGC) theme-based research scheme (TRS) of the Hong Kong Special Administrative Region Government

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

2. Barrier-Layer Scaling of InAlN/GaN HEMTs

3. 2.3 nm barrier AlN/GaN HEMTs with insulated gates

4. Scaled self-aligned N-polar GaN/AlGaN MIS-HEMTs with fT of 275GHz;Nidhi;IEEE Electron Device Lett.,2012

5. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

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1. Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD;Applied Physics Letters;2022-11-21

2. Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact;Journal of Applied Physics;2022-10-28

3. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiN_x Dielectric Layer;IEEE Journal of the Electron Devices Society;2022

4. AlN/GaN MISHEMTs on Si with in-situ SiN as a gate dielectric for power amplifiers in mobile SoCs;Applied Physics Express;2021-12-22

5. Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array;Materials;2021-09-22

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