DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistor-Reference-Cited by-同舟云学术

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DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistor

Published:1999 Issue:18 Volume:35 Page:1588
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Daumiller I.,Schmid P.,Kohn E.,Kirchner C.,Kamp M.,Ebeling K.J.,Pond L.L.,Weitzel C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19991041?crawler=true&mimetype=application/pdf

Reference7 articles.

1. Short-channel Al0.5Ga0.5N/GaN MODFETs with power density > 3 W/mm at 18 GHz

2. Novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping and one-dimensional simulation of charge control

3. Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical, optical and surface properties of P2S5/(NH4)2Sx+Se-treated doped-channel field-effect transistors with double etch-stop layers;Thin Solid Films;2011-03

2. 2.3 nm barrier AlN/GaN HEMTs with insulated gates;physica status solidi (c);2008-05

3. Piezoelectric GaN sensor structures;IEEE Electron Device Letters;2006-05

4. Influence of polarization on the properties of GaN based FET structures;physica status solidi (c);2003-08-27

5. Device characteristics of the GaN/InGaN-doped channel HFETs;IEEE Electron Device Letters;2001-11

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