Gate leakage mechanisms of AlN/GaN High electron mobility transistors-Reference-Cited by-同舟云学术

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Gate leakage mechanisms of AlN/GaN High electron mobility transistors

Published:2022-11-27 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Qin Lingjie¹,Zhu Jiejie¹,Liu Siyu¹,Guo Jingshu¹,Zhang Bowen¹,Zhou Yuxi¹,Qiu Tianze¹,Ma Xiaohua¹

Affiliation:

1. Xidian University,School of Microelectronics,Xi’an,People’s Republic of China,710071

Funder

Research and Development

National Natural Science Foundation of China

Xidian University

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10106786/10106791/10107116.pdf?arnumber=10107116

Reference15 articles.

1. Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT technology

2. Demonstration of low-leakage-current low-on-resistance 600-V 5.5-A GaN/AlGaN HEMT;xin;IEEE Electron Device Letters,2009

3. Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling

4. Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling

5. Leakage current by Frenkel–Poole emission in Ni/Au Schottky contacts on Al0.83In0.17N/AlN/GaN heterostructures

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