Ozone-Based Atomic Layer Deposition of Gd2O3from Tris(isopropyl-cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry-Reference-Cited by-同舟云学术

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Ozone-Based Atomic Layer Deposition of Gd2O3from Tris(isopropyl-cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry

Published:2015-11-10 Issue:10-11-12 Volume:21 Page:352-359
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Han Jeong Hwan¹²,Delabie Annelies¹³,Franquet Alexis¹,Conard Thierry¹,Van Elshocht Sven¹,Adelmann Christoph¹

Affiliation:

1. Imec; Kapeldreef 7 B-3001 Leuven Belgium

2. Korea Research Institute of Chemical Technology (KRICT); Division of Advanced Materials; Yuseong-Gu Daejeon 305-600 Republic of Korea

3. KU Leuven, Department of Chemistry,; Celestijnenlaan 200F B-3001 Leuven Belgium

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.201507196/fullpdf

Reference68 articles.

1. Atomic Layer Deposition: An Overview

2. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

3. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

4. Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials

5. (Invited) Current and Future Applications of ALD in Micro-Electronics

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