Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications-Reference-Cited by-同舟云学术

Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications

Published:2020-12-01 Issue:49 Volume:124 Page:26780-26792
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kim Jun Shik¹,Jang Younjin¹,Kang Sukin¹,Lee Yonghee¹,Kim Kwangmin²,Kim Whayoung¹,Lee Woongkyu³,Hwang Cheol Seong¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea

2. Graduate School of Engineering Practice, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea

3. Department of Electrical Engineering, Myongji University, 116 Myongji-ro, Cheoin-gu, Yongin-si, Gyeonggi-do 17058, Republic of Korea

Funder

Myongji University

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.0c07800

Reference65 articles.

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2. Suntola, T.; Antson, J. Method for Producing Compound Thin Films. U.S. Patent 4,058,430 A, November 25, 1977.

3. Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry

4. Erratum: ALD of Hafnium Oxide Thin Films from Tetrakis(ethylmethylamino)hafnium and Ozone [J. Electrochem. Soc., 152, G213 (2005)]

5. Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films

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