Enhancing electronic properties by suppressing nucleation delay for low-temperature processed atomic-layer-deposited amorphous zinc–tin-oxide thin films-Reference-Cited by-同舟云学术

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Enhancing electronic properties by suppressing nucleation delay for low-temperature processed atomic-layer-deposited amorphous zinc–tin-oxide thin films

Published:2024-05 Issue:9 Volume:50 Page:15085-15091
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Hung Hsin-Ning,Cheng Ching-Yun,Cheng I-Chun^ORCID,Shyue Jing-Jong^ORCID,Wang Ching-Chiun,Tsai Feng-Yu^ORCID

Funder

Ministry of Economic Affairs

Bureau of Energy, Ministry of Economic Affairs, Republic of Taiwan

Ministry of Education

Industrial Technology Research Institute

Advanced Research Center for Green Materials Science and Technology, National Taiwan University

National Science and Technology Council

Publisher

Elsevier BV

Reference19 articles.

1. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer;Chiang;Appl. Phys. Lett.,2005

2. Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors;Heo;Appl. Phys. Lett.,2012

3. High‐performance zinc tin oxide TFTs with active layers deposited by atomic layer deposition;Allemang;Adv. Electron. Mater.,2020

4. Monolithic integration of high-voltage thin-film electronics on low-voltage integrated circuits using a solution process;Son;Nat. Electron.,2019

5. Atomic layer deposition: an overview;George;Chem. Rev.,2010

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