Determination of the minority carrier lifetime in crystalline silicon thin-film material-Reference-Cited by-同舟云学术

Determination of the minority carrier lifetime in crystalline silicon thin-film material

Published:2012-06-26 Issue:2 Volume:22 Page:180-188
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Walter Dominic¹²,Rosenits Philipp¹,Berger Bastian³⁴,Reber Stefan¹,Warta Wilhelm¹

Affiliation:

1. Fraunhofer Institute for Solar Energy Systems; Heidenhofstraße 2 D-79110 Freiburg Germany

2. Now at Institute of Solar Energy Research Hamelin; Am Ohrberg 1 D-31860 Emmerthal Germany

3. Institute of Theoretical Physics; TU Bergakademie Freiberg; Leipziger Straße 23 D-09596 Freiberg Germany

4. Now at Freiberg Instruments GmbH; Am St. Niclas Schacht 13 D-09599 Freiberg Germany

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference18 articles.

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2. Minority carrier lifetime measurements in epitaxial silicon layers;Hara;Journal of the Electrochemical Society,1997

3. Sensitivity and transient response of microwave reflection measurements;Schöfthaler;Journal of Applied Physics,1995

4. Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD-PICTS) and microwave detected photoconductivity (MDP);Berger;Physica Status Solidi A,2011

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