Evaluation of the influence of an embedded porous silicon layer on the bulk lifetime of epitaxial layers and the interface recombination at the epitaxial layer/porous silicon interface

Author:

Radhakrishnan Hariharsudan Sivaramakrishnan12,Dross Frederic13,Debucquoy Maarten1,Rosenits Philipp4,Van Nieuwenhuysen Kris1,Gordon Ivan1,Poortmans Jef12,Mertens Robert12

Affiliation:

1. IMEC vzw; Kapeldreef 75 B-3001 Heverlee Belgium

2. Department of Electrical Engineering; Katholieke Universiteit Leuven; Kasteelpark Arenberg 10 B-3001 Heverlee Belgium

3. Hanwha Solar America; 2424 Walsh Avenue Santa Clara CA 95051 USA

4. Fraunhofer Institute for Solar Energy Systems (ISE); Heidenhofstr. 2 D-79110 Freiburg Germany

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Epitaxial thin-film Si solar cells;Beaucarne;Thin Solid Films,2006

2. Schmich E Prigge H Friess T Reber S Proceedings of the 23rd European photovoltaic solar energy conference 2008 2031 2036

3. Impurities in silicon solar cells;Davis;IEEE Transactions on Electron Devices,1980

4. A porous silicon intermediate reflector in thin film epitaxial silicon solar cells as a gettering site of impurities;Kuzma-Filipek;Physica Status Solidi C,2009

5. Gettering of transition metals by porous silicon in epitaxial silicon solar cells;Sivaramakrishnan Radhakrishnan;Physica Status Solidi A,2012

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