Injection-dependent Minority Carrier Lifetime in Epitaxial Silicon Layers by Time-resolved Photoluminescence
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Elsevier BV
Reference13 articles.
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1. Interface analysis of ultrathin SiO 2 layers between c‐Si substrates and phosphorus‐doped poly‐Si by theoretical surface potential analysis using the injection‐dependent lifetime;Progress in Photovoltaics: Research and Applications;2020-11-09
2. Time-resolved Photoluminescence for the Measurement of the Effective Carrier Lifetime in Si Photonic Structures;Energy Procedia;2015-12
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