The Atomic Layer Deposition of HfO2and ZrO2using Advanced Metallocene Precursors and H2O as the Oxygen Source-Reference-Cited by-同舟云学术

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The Atomic Layer Deposition of HfO2and ZrO2using Advanced Metallocene Precursors and H2O as the Oxygen Source

Published:2008-11 Issue:11-12 Volume:14 Page:358-365
ISSN:0948-1907
Container-title:Chemical Vapor Deposition
language:en
Short-container-title:Chem. Vap. Deposition

Author:

Dezelah Charles L.,Niinistö Jaakko,Kukli Kaupo,Munnik Frans,Lu Jun,Ritala Mikko,Leskelä Markku,Niinistö Lauri

Publisher

Wiley

Subject

Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.200806716/fullpdf

Reference59 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials

3. Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges

4. Atomic layer deposition (ALD): from precursors to thin film structures

5. Zirconium dioxide thin films deposited by ALE using zirconium tetrachloride as precursor

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