The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications-Reference-Cited by-同舟云学术

The Opportunity of Negative Capacitance Behavior in Flash Memory for High‐Density and Energy‐Efficient In‐Memory Computing Applications

Published:2022-12-07 Issue:7 Volume:33 Page:2208525
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Kim Taeho¹^ORCID,Kim Giuk¹,Lee Young Kyu²,Ko Dong Han²,Hwang Junghyeon¹,Lee Sangho¹,Shin Hunbeom¹,Jeong Yeongseok¹,Jung Seong‐Ook²,Jeon Sanghun¹^ORCID

Affiliation:

1. School of Electrical Engineering Korea Advanced Institute of Science and Technology Daejeon 34141 Republic of Korea

2. School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202208525

Reference39 articles.

1. A crossbar array of magnetoresistive memory devices for in-memory computing

2. In-memory computing with resistive switching devices

3. A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices

4. Low-power linear computation using nonlinear ferroelectric tunnel junction memristors

5. A Robust Memristor Based on Epitaxial Vertically Aligned Nanostructured BaTiO ₃ −CeO ₂ Films on Silicon

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