A crossbar array of magnetoresistive memory devices for in-memory computing-Reference-Cited by-同舟云学术

A crossbar array of magnetoresistive memory devices for in-memory computing

Published:2022-01-12 Issue:7892 Volume:601 Page:211-216
ISSN:0028-0836
Container-title:Nature
language:en
Short-container-title:Nature

Author:

Jung Seungchul^ORCID,Lee Hyungwoo,Myung Sungmeen^ORCID,Kim Hyunsoo^ORCID,Yoon Seung Keun,Kwon Soon-Wan,Ju Yongmin,Kim Minje,Yi Wooseok,Han Shinhee,Kwon Baeseong,Seo Boyoung,Lee Kilho,Koh Gwan-Hyeob,Lee Kangho,Song Yoonjong,Choi Changkyu^ORCID,Ham Donhee^ORCID,Kim Sang Joon^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

https://www.nature.com/articles/s41586-021-04196-6.pdf

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3. Song, J. et al. An 11.5TOPS/W 1024-MAC butterfly structure dual-core sparsity-aware neural processing unit in 8nm flagship mobile SoC. In 2019 IEEE Int. Solid-State Circuits Conference Digest of Technical Papers (ISSCC) 130−131 (IEEE, 2019).

4. Sebastian, A. et al. Memory devices and applications for in-memory computing. Nat. Nanotechnol. 15, 529–544 (2020).

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