A Robust Memristor Based on Epitaxial Vertically Aligned Nanostructured BaTiO <sub>3</sub> −CeO <sub>2</sub> Films on Silicon-Reference-Cited by-同舟云学术

A Robust Memristor Based on Epitaxial Vertically Aligned Nanostructured BaTiO ₃ −CeO ₂ Films on Silicon

Published:2022-05-02 Issue:23 Volume:34 Page:2110343
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Yan Xiaobing¹^ORCID,He Haidong¹,Liu Gongjie¹,Zhao Zhen¹,Pei Yifei¹,Liu Pan¹,Zhao Jianhui¹,Zhou Zhenyu¹,Wang Kaiyang¹,Yan Hongwei¹

Affiliation:

1. Key Laboratory of Brain‐like Neuromorphic Devices and Systems of Hebei Province College of Electron and Information Engineering Hebei University Baoding 071002 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202110343

Reference40 articles.

1. The Principles of Large-Scale Computing Machines

2. Memory and Information Processing in Neuromorphic Systems

3. Towards artificial neurons and synapses: a materials point of view

4. Bistable Capacitance Performance-Induced Ambipolar Charge Injected Based on Ba0.6Sr0.4TiO3 by an Inlaid Zr–Hf–O Layer for Novel Nonvolatile Memory Application

5. Transistor analogs of emergent iono‐neuronal dynamics

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