Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity-Reference-Cited by-同舟云学术

Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity

Published:2021-06-10 Issue:33 Volume:31 Page:2102556
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Lee Jinseon¹,Lee Jeong‐Min¹,Oh Hongjun²,Kim Changhan³,Kim Jiseong³,Kim Dae Hyun³,Shong Bonggeun²^ORCID,Park Tae Joo¹^ORCID,Kim Woo‐Hee¹^ORCID

Affiliation:

1. Department of Materials Science and Chemical Engineering BK21 FOUR ERICA‐ACE Center Hanyang University 55 Hanyangdeahak‐ro, Sangnok‐gu Ansan Gyeonggi‐do 15588 Republic of Korea

2. Department of Chemical Engineering Hongik University 94 Wausan‐ro, Mapo‐gu Seoul 04066 Korea

3. SK Hynix Inc. 2091 Gyeongchung‐daero, Bubal‐eub Icheon‐si Gyeonggi‐do 17336 Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202102556

Reference45 articles.

1. Semiconductor Logic Technology Innovation to Achieve Sub-10 nm Manufacturing

2. A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation

3. Patterning and Templating for Nanoelectronics

4. Perspective: New process technologies required for future devices and scaling

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