Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes-Reference-Cited by-同舟云学术

Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes

Published:2020-03-29 Issue:22 Volume:30 Page:2001283
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Liu Fang¹,Zhang Zhihong¹,Rong Xin¹,Yu Ye²,Wang Tao¹³,Sheng Bowen¹,Wei Jiaqi¹,Zhou Siyuan¹,Yang Xuelin¹,Xu Fujun¹,Qin Zhixin¹,Zhang Yuantao²,Liu Kaihui¹⁴,Shen Bo¹⁴,Wang Xinqiang¹⁴^ORCID

Affiliation:

1. State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of Physics; Peking University; Beijing 100871 P. R. China

2. State Key Laboratory of Integrated Optoelectronics; College of Electronic Science and Engineering; Jilin University; Changchun 130012 P. R. China

3. Electron Microscopy Laboratory; School of Physics; Peking University; Beijing 00871 P. R. China

4. Collaborative Innovation Center of Quantum Matter; Beijing 100871 P. R. China

Funder

National Key R&D Program of China

Beijing Outstanding Young Scientist Program

Science Challenge Project

National Natural Science Foundation of China

Bureau of Industry and Information Technology of Shenzhen

Natural Science Foundation of Beijing Municipality

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adfm.202001283/fullpdf

Reference38 articles.

1. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

2. Flexible Inorganic Nanostructure Light-Emitting Diodes Fabricated on Graphene Films

3. Microstructures of GaN Thin Films Grown on Graphene Layers

4. Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers

5. Graphene/p-AlGaN/p-GaN electron tunnelling light emitting diodes with high external quantum efficiency

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