Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers-Reference-Cited by-同舟云学术

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Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers

Published:2013-10-28 Issue:18 Volume:103 Page:181108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gupta Priti,Rahman A. A.,Hatui Nirupam,Parmar Jayesh B.,Chalke Bhagyashree A.,Bapat Rudheer D.,Purandare S. C.,Deshmukh Mandar M.,Bhattacharya Arnab

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4827539

Reference23 articles.

1. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

2. Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells

3. High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

4. True-green (11-22) plane optically pumped laser with cleaved m-plane facets

5. GaN and InGaN(112̱2) surfaces: Group-III adlayers and indium incorporation

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