Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells-Reference-Cited by-同舟云学术

Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells

Published:2013-01-07 Issue:1 Volume:102 Page:011134
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Cheng-Chang,Chiu Ching-Hsueh,Chang Shih-Pang,Shih M. H.,Kuo Ming-Yen,Huang Ji-Kai,Kuo Hao-Chung,Chen Shih-Pu,Lee Li-Ling,Jeng Ming-Shan

Funder

National Science Council Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4775373

Reference39 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

3. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

5. Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching

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