MOVPE growth of semipolar (112¯2) Al1−xInxN across the alloy composition range (0≤x≤0.55)-Reference-Cited by-同舟云学术

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MOVPE growth of semipolar (112¯2) Al1−xInxN across the alloy composition range (0≤x≤0.55)

Published:2015-02 Issue: Volume:411 Page:106-109
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hatui Nirupam,Frentrup Martin,Rahman A. Azizur,Kadir Abdul,Subramanian Shruti,Kneissl Michael,Bhattacharya Arnab

Funder

TIFR

German Research Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference33 articles.

1. Semipolar GaN grown on foreign substrates: a review

2. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

3. Large-area ultraviolet GaN-based photonic quasicrystal laser with high-efficiency green color emission of semipolar {10-11} In0.3Ga0.7N/GaN multiple quantum wells

4. High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

5. True-green (11-22) plane optically pumped laser with cleaved m-plane facets

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/ m ‐plane Sapphire Template;physica status solidi (b);2023-01-04

2. Optical and electrical properties of Al1-xInxN films with a wide middle-composition range by RF sputtering;Applied Physics A;2022-01-22

3. Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy;Nanoscale Advances;2022

4. Influence of Nucleation Layers on MOVPE Growth of Semipolar ($$11{\bar{2}}2$$) GaN on m-Plane Sapphire;Journal of Electronic Materials;2021-05-21

5. Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates;Materials Science in Semiconductor Processing;2021-05

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