Microstructures of GaN Thin Films Grown on Graphene Layers-Reference-Cited by-同舟云学术

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Microstructures of GaN Thin Films Grown on Graphene Layers

Published:2011-12-27 Issue:4 Volume:24 Page:515-518
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Yoo Hyobin,Chung Kunook,Choi Yong Seok,Kang Chan Soon,Oh Kyu Hwan,Kim Miyoung,Yi Gyu-Chul

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201103829/fullpdf

Reference23 articles.

1. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

2. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

3. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

4. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

5. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

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1. Wafer level quasi-van der Waals epitaxy of AlGaN/GaN heterojunctions on sp2-bonded BN controlled by AlN nucleation layer;Applied Surface Science;2024-06

2. Methods and optoelectronic device applications of semiconductor epitaxy assisted by two-dimensional van der Waals materials;Journal of Information Display;2024-01-02

3. Ultrathin GaN Crystal Realized Through Nitrogen Substitution of Layered GaS;Journal of Electronic Materials;2023-09-02

4. Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review;National Science Open;2023-07-01

5. Quasi-van der Waals Epitaxy of a Stress-Released AlN Film on Thermally Annealed Hexagonal BN for Deep Ultraviolet Light-Emitting Diodes;ACS Applied Materials & Interfaces;2023-05-03

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