Graphene/p-AlGaN/p-GaN electron tunnelling light emitting diodes with high external quantum efficiency-Reference-Cited by-同舟云学术

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Graphene/p-AlGaN/p-GaN electron tunnelling light emitting diodes with high external quantum efficiency

Published:2019-06 Issue: Volume:60 Page:836-840
ISSN:2211-2855
Container-title:Nano Energy
language:en
Short-container-title:Nano Energy

Author:

Feng Sirui,Dong Binzhong,Lu Yanghua,Yin Lingfeng,Wei Bailin,Wang Jiangbo,Lin Shisheng

Funder

National Natural Science Foundation of China

Special Foundation of Young Professor of Zhejiang University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,General Materials Science,Renewable Energy, Sustainability and the Environment

Reference31 articles.

1. Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver;Wada;IEEE Electron. Device Lett.,1982

2. The effect of nitrogen doping on GaAs1-xPx electroluminescent diodes;Groves;Appl. Phys. Lett.,1971

3. High-efficiency algainp light-emitting diodes for solid-state lighting applications;Gessmann;J. Appl. Phys.,2004

4. High-power GaN P-N junction blue-light-emitting diodes;Shuji;Jpn. J. Appl. Phys.,1991

5. Hole conductivity and compensation in epitaxial GaN:Mg layers;Kaufmann;Phys. Rev. B,2000

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