Author:
Makiyama Kozo,Ohki Toshihiro,Kanamura Masahito,Imanishi Kenji,Hara Naoki,Kikkawa Toshihide
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
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3. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
4. Field-plated 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs with varying field-plate length
5. 30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs
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