Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications-Reference-Cited by-同舟云学术

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Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications

Published:2019-06-28 Issue:4 Volume:8 Page:472-482
ISSN:2168-1724
Container-title:International Journal of Electronics Letters
language:en
Short-container-title:International Journal of Electronics Letters

Author:

Murugapandiyan P.¹,Rajya Lakshmi V.¹,Wasim Mohammed²,Meenakshi Sundaram K.³

Affiliation:

1. Department of Electronics and Communication Engineering, Anil Neerukonda Institute of Technology & Sciences, Visakhapatnam, India

2. Department of Electronics and Communication Engineering, Lovely Professional University, Jalandar, India

3. Fellow in Faculty of Graduate Studies and Research, Botho University, Gaborone, Botswana

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/21681724.2019.1636295

Reference43 articles.

1. Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using$hboxCF_4$Plasma Treatment

2. Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation

3. High-Speed 501-Stage DCFL GaN Ring Oscillator Circuits

4. Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

5. ${\rm SiN}_{x}$ /InAlN/AlN/GaN MIS-HEMTs With 10.8 ${\rm THz}\cdot{\rm V}$ Johnson Figure of Merit

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Channel length, Gate length and Gate position Optimization of III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics and Terahertz Applications;Materials Science and Engineering: B;2023-07

2. Simulation modelling of III‐Nitride / β ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications;International Journal of RF and Microwave Computer-Aided Engineering;2022-09-15

3. Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications;Journal of Computational Electronics;2021-01-02

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