Thermally enhanced formation of photon-induced damage on GaN films in Cl2plasma-Reference-Cited by-同舟云学术

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Thermally enhanced formation of photon-induced damage on GaN films in Cl2plasma

Published:2017-08-29 Issue:9 Volume:56 Page:096501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Zecheng,Asano Atsuki,Imamura Masato,Ishikawa Kenji,Takeda Keigo,Kondo Hiroki,Oda Osamu,Sekine Makoto,Hori Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=9/a=096501/pdf

Reference40 articles.

1. Optically pumped lasing properties of $(1\bar{1}01)$ InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates

2. High-fmaxGaN HEMT with high breakdown voltage over 100 V for millimeter-wave applications

3. Reactive ion etching of GaN using BCl3

4. High density plasma etching of III–V nitrides

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness;Materials Science in Semiconductor Processing;2022-06

2. Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices;Applied Physics Letters;2021-03-08

3. Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma;Coatings;2021-02-25

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