Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices-Reference-Cited by-同舟云学术

Formation of highly vertical trenches with rounded corners via inductively coupled plasma reactive ion etching for vertical GaN power devices

Published:2021-03-08 Issue:10 Volume:118 Page:102101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yamada Shinji¹²^ORCID,Sakurai Hideki¹²^ORCID,Osada Yamato²,Furuta Kanji²,Nakamura Toshiyuki²,Kamimura Ryuichiro²,Narita Tetsuo³^ORCID,Suda Jun¹^ORCID,Kachi Tetsu¹^ORCID

Affiliation:

1. Nagoya University, Nagoya 464-8601, Japan

2. ULVAC, Inc., Chigasaki 253-8543, Japan

3. Toyota Central R&D Labs., Inc., Nagakute 480-1192, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0040920

Reference32 articles.

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2. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

3. D. Shibata , R. Kajitani , M. Ogawa , K. Tanaka , S. Tamura , T. Hatsuda , M. Ishida , and T. Ueda , in IEEE International Electron Devices Meeting (IEDM) ( IEEE, 2016), p. 248.

4. High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

5. First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET

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