Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference31 articles.
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3. GaN-Based RF power devices and amplifiers;Mishra;Proc. IEEE,2008
4. Gate-recessed InAlN/GaN HEMTs on SiC substrate with Al2O3 passivation;Chung;IEEE Electron Device Lett.,2009
5. 94-GHz large-signal operation of AlInN/GaN high-electron-mobility transistors on silicon with regrown ohmic contacts;Marti;IEEE Electron Device Lett.,2015
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